Practice Step 3: Sub-100nm Scaling – Leakage Takes Over (2.5) - Evolution of Low-Power Design in Advanced Semiconductor Devices

Practice: Step 3: Sub-100nm Scaling – Leakage Takes Over

Lesson 2.5Evolution of Low-Power Design in Advanced Semiconductor Devices

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9 questions

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6 sample questions

Question 1.
What is subthreshold leakage?
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Think about transistor behavior when not active.
Question 2.
Name one method to control leakage in CMOS technology.
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Consider methods that increase the threshold voltage.
3Question 3.
What is the primary issue with leakage currents in transistors scaled below 100nm?
- It increases performance
- It contributes to heat generation
- It increases overall power consumption
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Consider the definition of a leakage current.
4Question 4.
True or False: High-Vt transistors have a lower threshold voltage than traditional transistors.
- True
- False
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Understand what high-Vt means in terms of performance.
Question 5.
Given that leakage current can account for over 30% of total power at 65nm processes, discuss strategies engineers could employ to mitigate this leakage impact in future nodes.
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Consider a combination of circuit design strategies.
Question 6.
Evaluate the trade-offs of using high-Vt transistors versus standard transistors in low-power applications.
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Think about how speed and power consumption are interconnected in engineering design.

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