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2 cards from this section. Quick, good the night before a test.
What does V_GS stand for?
Think about which voltage controls the gate in a transistor.
What does I_DS represent?
Recall the flow direction in a transistor.
What happens to I_DS when the width (W) is increased?
Think about how width affects charge movement.
T/F: Longer device length decreases current flow.
Recall how distance affects electron travel.
If you have a transistor with a given W of 2 mm and L of 1 mm, explain how the I_DS would change if L is increased to 3 mm while W is unchanged.
Reflect on how distance affects current flow.
Consider if the oxide thickness t_ox is halved. Predict the impact on I_DS and justify your reasoning.
Think about dielectric effects on electron behavior.
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