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3 cards from this section. Quick, good the night before a test.
What is V_GS and how does it influence a transistor?
Think about what voltage is applied at the gate.
Define V_DS.
Consider what happens between the drain and source terminals.
What is the main role of V_GS in a transistor?
Think about what happens at the gate of the transistor.
True or False: Increasing V_DS always improves device performance.
Remember the limits of voltage application in device testing.
Given a transistor with fixed parameters W = 2 mm, L = 1 mm, and a constant V_GS of 5V, calculate the expected I_DS if V_DS is increased from 2V to 10V while maintaining the other parameters the same.
Refer to the current characteristics curve for the transistor type to find expected values.
If an increase in oxide thickness (t_ox) results in halving the electron mobility, explain the effects on I_DS when V_GS and V_DS are constant.
Think about the impact of mobility on the drift current in the transistor.
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