Practice Biases And Vertical Field (11.2.1) - Revisiting MOSFET (Contd.)

Practise this section

8 questions

Flashcard drill
2 cards from this section. Quick, good the night before a test.
Exercise
6 questions · about 4 min · pass mark 70%. Hints available.
Sign up to start the exercise
Quiz
2 questions · about 1 min · pass mark 70%. Hints available.
Sign up to start the quiz

6 sample questions

Question 1.
What does Vgs stand for?
Show hintHide hint
What voltage does the gate apply to the source?
Question 2.
How does increasing W affect Ids?
Show hintHide hint
Think about how current relates to channel size.
3Question 3.
What is Vds in a MOSFET?
- Voltage between gate and source
- Voltage between drain and source
- The threshold voltage
Show hintHide hint
Consider the part of the MOSFET that drains current.
4Question 4.
True or False: Increasing Vth will increase Ids.
- True
- False
Show hintHide hint
Think about what it means to surpass a threshold.
Question 5.
If you have a MOSFET where Vgs = 6V, Vth = 1V, and Vds = 4V, calculate Ids when k is 5. What changes if you increase L?
Show hintHide hint
Use the Ids formula and consider the effects of increasing resistance.
Question 6.
Discuss the importance of device parameters in determining Ids when designing a circuit.
Show hintHide hint
Relate these factors to real-world circuit behaviors in MOSFETs.

4 more questions in this section. Enroll free to practise them all.